A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This uses nitrogen ion (N+) implantation form multiple parallel nanoribbons on heterostructures, with a thin buffer layer (AlGaN/GaN NR-HEMTs). The stopping and range ions in matter simulations N+ combined measured current-field characteristics reveal good electrical isolation beneath two-dimensional electron gas, resulting substantial increase breakdown field NR-HEMTs, when compared conventional HEMTs. fabricated NR-HEMTs performed (i) an ON/OFF current ratio more than two orders magnitude larger (ii) leakage one order weaker that on-resistance, RON, series resistance, RS, are both reduced by those These have boosted drive density up 435%. Furthermore, we found architecture reduces destructive impact traps device. An optimized NR-HEMT exhibited better electrostatic integrity, subthreshold slope ∼210 mV/dec instead 730 for GaN HEMT. higher linearity transconductance, gm, observed, twice results demonstrate great interest technology high-power switching applications.